{"id":127,"date":"2009-01-16T17:46:33","date_gmt":"2009-01-17T01:46:33","guid":{"rendered":"http:\/\/betasights.net\/wordpress\/?p=127"},"modified":"2009-01-16T17:46:33","modified_gmt":"2009-01-17T01:46:33","slug":"hynix-sees-sttram-and-reram-some-day","status":"publish","type":"post","link":"http:\/\/www.betasights.net\/wordpress\/?p=127","title":{"rendered":"Hynix sees STTRAM and ReRAM some day"},"content":{"rendered":"

At SEMI\u2019s SMC yesterday<\/a>, Sung Wook Park, executive vice president and general manager of Hynix Semiconductor<\/a>, provided a keynote address on the materials needs for mainstream memory chips over the next decade. DRAMs will likely turn into STTRAMs<\/a>, and NAND Flash will probably be replaced by ReRAM (Ref: Ed’s Threads 080505<\/em>)<\/a>. Combinatorial materials R&D company Intermolecular<\/a> claimed to have leaped over the rest of the world in finding an ideal materials set for ReRAM.<\/p>\n

\"Combinatorial<\/a>

Combinatorial materials R&D led to a new ReRAM with >100 ION\/IOFF (source: Intermolecular)<\/p><\/div>\n

Using a three-stage screening process, Intermolecular tested over 75k conditions over a 20 month period to discover and optimize ReRAM; >4k different cells were tested which generated a lot of IP. Flash specs are 10k cycles, while most ReRAM tested so far reaches only ~1k cycles. \u201cMoved to an entirely new materials set, and the result of that was a behavior that is fundamentally different,\u201d explained CEO David Lazovsky. The new materials reportedly meet ION\/IOFF>100 (see Figure<\/em>) and endurance >10k cycles.<\/p>\n

When will this new materials set be needed in production? Technology node progression for memory will soon slow down. DRAM scales to ~32nm, and then a completely new technology such as spin-transfer torque (STT, a.k.a. tunneling magneto-resistance<\/a>, or magnetic tunnel junction<\/a>) RAM would be needed by 2012. NAND should scale to ~22nm using floating traps, then cross-point ReRAM should work. Phase-change memory (PCM) may also work soon.<\/a> \u201cThe PC RAM has a slight lead, but the ReRAM is gaining a lot of interest,\u201d declared Park.<\/p>\n

Tradeoffs are inherent in our era. 8F2 DRAM cells had been the standard, but most companies have already moved to 6F2 cells<\/a> (based on a \u201ctwist\u201d structure). Scaling in DRAM has already led to extreme aspect-ratios (AR) for storage capacitors; >45 for 4xnm node technology, so a tradeoff has been the need to physically link them for mechanical stability. Single-wafer and dry cleaning technologies help in the processing of such extreme structures. Innovation is needed now more than ever before. \u2013E.K.<\/em><\/p>\n","protected":false},"excerpt":{"rendered":"

At SEMI\u2019s SMC yesterday, Sung Wook Park, executive vice president and general manager of Hynix Semiconductor, provided a keynote address on the materials needs for mainstream memory chips over the next decade. DRAMs will likely turn into STTRAMs, and NAND Flash will probably be replaced by ReRAM (Ref: Ed’s Threads 080505). Combinatorial materials R&D company […]<\/p>\n","protected":false},"author":1,"featured_media":0,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[9,3,4,10,8],"tags":[46,103,20,97,100,102,105,76,98,104,94,99,101],"class_list":["post-127","post","type-post","status-publish","format-standard","hentry","category-equipment","category-manufacturing-fabrication-line","category-integrated-circuit","category-material","category-market-segment","tag-dram","tag-flash","tag-materials","tag-memory","tag-mtj","tag-nand","tag-pcm","tag-rd","tag-ram","tag-reram","tag-smc","tag-stt","tag-tmr"],"_links":{"self":[{"href":"http:\/\/www.betasights.net\/wordpress\/index.php?rest_route=\/wp\/v2\/posts\/127","targetHints":{"allow":["GET"]}}],"collection":[{"href":"http:\/\/www.betasights.net\/wordpress\/index.php?rest_route=\/wp\/v2\/posts"}],"about":[{"href":"http:\/\/www.betasights.net\/wordpress\/index.php?rest_route=\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"http:\/\/www.betasights.net\/wordpress\/index.php?rest_route=\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"http:\/\/www.betasights.net\/wordpress\/index.php?rest_route=%2Fwp%2Fv2%2Fcomments&post=127"}],"version-history":[{"count":5,"href":"http:\/\/www.betasights.net\/wordpress\/index.php?rest_route=\/wp\/v2\/posts\/127\/revisions"}],"predecessor-version":[{"id":133,"href":"http:\/\/www.betasights.net\/wordpress\/index.php?rest_route=\/wp\/v2\/posts\/127\/revisions\/133"}],"wp:attachment":[{"href":"http:\/\/www.betasights.net\/wordpress\/index.php?rest_route=%2Fwp%2Fv2%2Fmedia&parent=127"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"http:\/\/www.betasights.net\/wordpress\/index.php?rest_route=%2Fwp%2Fv2%2Fcategories&post=127"},{"taxonomy":"post_tag","embeddable":true,"href":"http:\/\/www.betasights.net\/wordpress\/index.php?rest_route=%2Fwp%2Fv2%2Ftags&post=127"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}