Thursday, February 19th, 2009
JSR announced today that it has entered into several joint development partnerships (JDP) with IBM to develop low-k dielectrics for 32nm and 22nm nodes of semiconductor technology. The companies will work on next generation materials JSR has had in development and commercial production, including low-k dielectrics and a broad range of photoresists. “This larger scale […]
JSR and IBM low-k JDPs for 32/22nm
Tags: 32nm, Cu, CVD, IC, litho, low-k, porous, resist, spin-on, ULK
Posted in fab, IC, Material, Product | Comments Off on JSR and IBM low-k JDPs for 32/22nm
Wednesday, February 18th, 2009
For thick plating applications like copper pillar bump processing in semiconductor advanced packaging, Shin-Etsu MicroSi has introduced a positive tone, ultra-thick photoresist, SIPR-7126. The 7100 chemically amplified (CA) series has been in production for several years, and the SIPR-7126 has been optimized to reduce processing steps and improve removability in layers up to 100 µm […]
Shin-Etsu positive i-line resist 100 microns thick
Tags: bump, CA, i-line, IC, litho, resist, TMAH, TSV
Posted in fab, IC, Material, MEMS, Product | Comments Off on Shin-Etsu positive i-line resist 100 microns thick
