Monday, March 21st, 2011
SPIE Advanced Lithography 2011 showed few new tools or techniques, but many new materials and integration tricks to extend 193i into double-patterning for IC HVM, while EUV and DSA developments continue according to expert Dr. M. David Levenson of BetaSights.
Tuesday, October 5th, 2010
Direct-write, maskless, lithography using e-beams is not ready for 22nm node IC manufacturing, and the SPIE BACUS presentations show EbDW issues include data transfer and inspection.
Tuesday, September 14th, 2010
E-beam Initiative adds four members and starts on Design for E-beam (DFEB) for mask makng for ICs to reduce mask costs at 22nm and below.
Tuesday, August 17th, 2010
Post-optical lithography (NGL) technologies EUV (EUVL), e-beam direct-write (EbDW), and nano-imprint (NIL) all need work as shown at SEMICON/West 2010, major costs limitations.
Monday, April 5th, 2010
The 2010 SPIE Advanced Lithography conference is where we first get glimpses of the future of nano-scale patterning technology for manufacturing. Sometimes, many fuzzy blobs come into focus as a picture in a single moment, and Yan Borodovsky of Intel showed how to do 22nm node litho the day before SPIE officially started. At both […]
Monday, March 15th, 2010
Another back-to-the-future possibility for next-generation lithography (NGL) is direct write e-beam (DWEB), revitalized with multibeam clusters, curvilinear mask writing, and character projection (CP). The E-beam Initiative used the recent SPIE gathering to announce that it had added six new member companies, including GlobalFoundries and Samsung. Aki Fujimura, CEO of D2S and Managing Director of the […]
Monday, March 8th, 2010
This year’s plenary sessions of the SPIE Advanced Lithography Symposium exposed the complexities of patterning ICs in high-volume manufacturing (HVM) at the 22nm node and beyond. Steppers using 193nm ArF immersion (193i) will be extended using double-patterning (DP) schemes, since the extreme-ultra-violet litho (EUVL) infrastructure is again delayed. R&D to support DP integration has led […]
Tuesday, August 4th, 2009
While EUV Lithography may now be inevitable, according to SEMATECH Program Manager Bryan Rice, it may not be indispensable. SEMICON West offered a snapshot of progress towards the 32nm, 22nm, and 16nm device nodes at the Device Scaling TechXPOT, and the industry appears to have patterning options even if EUV encounters further delay. Yan Borodovsky […]
Wednesday, March 4th, 2009
Electron beam direct write (EBDW) lithography is well-developed and has better potential resolution than any other method, but writing speeds did not keep up with Moore’s law after about 1980, leading to abysmal throughput (measured in hours per wafer). Now, the e-Beam Initiative focusing on design for e-beam manufacturing (DFEB) and multibeam writing using MEMS […]