Monday, March 21st, 2011
SPIE Advanced Lithography 2011 showed few new tools or techniques, but many new materials and integration tricks to extend 193i into double-patterning for IC HVM, while EUV and DSA developments continue according to expert Dr. M. David Levenson of BetaSights.
Advanced Lithography is All about Materials
Tags: 10nm, 16nm, 193i, 20nm, 22nm, a-Si, Advanced Lithography, ALD, alt-PSM, ArF, ASML, CAR, CDU, Cymer, DFM, Dow, DP, DPP, DR, DSA, EbDW, EDA, EUV, EUVL, GDR, Gigaphoton, IBM, IC, IMEC, Intel, LELE, LER, Levenson, litho, logic, LPP, LWR, materials, MEEF, Nikon, OPC, PAG, RDR, RET, RSADP, SADP, Samsung, SPIE, SRAM, TEL, TSMC, Xtreme
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Tuesday, April 21st, 2009
IMEC has successfully transferred memory variability aware modeling (MemoryVAM), the first EDA tool for statistical memory analysis, to Samsung Electronics. The tool predicts yield loss of embedded SRAMs caused by the process variations of deep-submicron IC technologies. This may be the first proven design-for-manufacturing (DFM) tool to provide statistical analysis across degrees of abstraction from […]
IMEC eSRAM DFM tool to Samsung
Tags: 32nm, 45nm, DFM, EDA, eSRAM, IC, process, SRAM, variation, yield
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Thursday, March 26th, 2009
German and French teams are combining EUR 14.5m investment into development of strained-silicon on insulator (sSOI) technology under the DEvice and CIrcuit performance boosted through SIlicon material Fabrication (DECISIF) program. The work will combine original research results from Research Center Juelich and Leti/Soitec to try to lower costs and defect-densities in the creation of 300mm […]
DECISIF start on strained silicon
Tags: 22nm, 32nm, 45nm, CVD, EDA, epi, IC, implant, integration, Material, Si, SiGe, SOI, sSOI, strain, wafer
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Thursday, March 19th, 2009
Mentor Graphics has announced new capabilities to the Calibre(R) platform to allow designers to control thickness variability due to Chemical Mechanical Planarization (CMP) at advanced process nodes. Designers can transition from dummy fill to density-based fill, or to full model-based fill, depending on the demands of their designs and target manufacturing process. The new capability […]
Mentor 3D solves CMP variation
Tags: 45nm, 65nm, CMP, EDA, fill, IC, metal, model, variation
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