Posts Tagged ‘NIL’

Tuesday, August 17th, 2010

Post-optical lithography (NGL) technologies EUV (EUVL), e-beam direct-write (EbDW), and nano-imprint (NIL) all need work as shown at SEMICON/West 2010, major costs limitations.

Monday, April 5th, 2010

The 2010 SPIE Advanced Lithography conference is where we first get glimpses of the future of nano-scale patterning technology for manufacturing. Sometimes, many fuzzy blobs come into focus as a picture in a single moment, and Yan Borodovsky of Intel showed how to do 22nm node litho the day before SPIE officially started. At both […]

Monday, March 8th, 2010

This year’s plenary sessions of the SPIE Advanced Lithography Symposium exposed the complexities of patterning ICs in high-volume manufacturing (HVM) at the 22nm node and beyond. Steppers using 193nm ArF immersion (193i) will be extended using double-patterning (DP) schemes, since the extreme-ultra-violet litho (EUVL) infrastructure is again delayed. R&D to support DP integration has led […]

Monday, March 1st, 2010

Molecular Imprints, Inc, announced their first nanopatterning tool designed for pilot and volume production of patterned hard disc drive (HDD) substrates at the SPIE Advanced Lithography Symposium in San Jose, CA February 22. The NuTera HD7000 uses Jet and Flash Imprint Lithography (J-FIL) technology to print over 300 double sided disks per hour up to […]

Tuesday, August 4th, 2009

While EUV Lithography may now be inevitable, according to SEMATECH Program Manager Bryan Rice, it may not be indispensable. SEMICON West offered a snapshot of progress towards the 32nm, 22nm, and 16nm device nodes at the Device Scaling TechXPOT, and the industry appears to have patterning options even if EUV encounters further delay. Yan Borodovsky […]

Wednesday, February 25th, 2009

Applied Materials’ Technical Symposium at SPIE 2009 featured a panel discussion on next generation lithography (NGL) that was moderated by the company’s Ken MacWIlliams. The outstanding panelists were C. Grant Willson (UT-Austin), Burn Lin (TSMC), Jongwook Kye (AMD), Steve Radigan (Sandisk), and Milind Weling (Cadence). As would be expected from this panel, EUV steppers were […]

Monday, February 23rd, 2009

JEOL will install the first e-beam direct-write-on-wafer (EBDW) lithography tool to support nanotechnology development in the Pacific Northwest when the University of Washington takes delivery of a JBX-6300FS tool. The system will be installed in the state-funded Washington Technology Center Microfabrication Lab. Funding for the tool acquisition was provided through a state-supported STAR researchers’ grant […]