Archive for the ‘IC’ Category
Tuesday, February 3rd, 2009
The Collaborative Alliance for Semiconductor Test (CAST) will join SEMI as a special interest group to better manage and accelerate industry progress on critical test issues. CAST expects to gain administrative efficiencies, global resources, SEMI International Standards support, and greater recognition for the CAST agenda. CAST will transfer its governance structure and agenda to SEMI […]
CAST as SEMI special interest group
Tags: group, IC, R&D, SEMI, standards, test, value
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Monday, February 2nd, 2009
Veeco has exited betas with a new Atomic Force Microscope (AFM) named Dimension® Icon™ that provides small-sample resolution for large-samples. Building upon the successful Dimension AFM platform, the latest member of the product line delivers the highest resolution, best ease-of-use, and fastest time-to-results of any large-sample AFM on the market today. “With the Icon AFM, […]
Veeco AFM exits beta with rave review
Tags: AFM, beta, IC, metrology, OEM, PV, R&D, tool
Posted in Equipment, FPD, IC, MEMS, Product, PV | Comments Off on Veeco AFM exits beta with rave review
Friday, January 30th, 2009
Ziptronix wants to help you with your 3D roadmap. The IP spin-out from Research Triangle Park, NC is now actively negotiating licenses to its unique wafer-to-wafer (W2W) and die-to-wafer (D2W) bonding technologies. Using treated-oxide (with surface treatments) and nickel (with a mystery metal) as the connecting materials, room temperature bonding with up to 108/cm2 of […]
Ziptronix floats IP licenses for 3D IC bonding
Tags: 3D, bonding, IC, InP, integration, IP, Ni, oxide, Si, TSV
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Thursday, January 29th, 2009
Aixtron and Ovonyx announced a JDP for Atomic Vapor Deposition (AVD®) process technology to push scaling of next-generation phase change memory (PCM) products. Since it is expected to replace current high-density memory, PCM cells must be made dense and so companies like Samsung (Ref: BetaSights Newsletter 0001) and Numonyx require CVD-like processes for gap-fill instead […]
Aixtron and Ovonyx partner for PCM deposition
Tags: ALD, chamber, CVD, memory, PCM, precursor, PVD, Si, vapor
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Wednesday, January 28th, 2009
Silicon Clocks, the developer of custom semiconductor timing solutions that has reinvented itself as a “custom product development house” with a new CEO, has announced a new product based on its CMOS-MEMS (CMEMS) embedded approach. CMEMS-ZeroThermal passive temperature compensation resonators exhibit comparable temperature stability to quartz crystals, while drastically simplifying oscillator design, and reportedly reducing […]
Silicon Clocks embeds MEMS on CMOS
Tags: clock, CMOS, crystal, integration, IP, MEMS, resonator, Si, SiGe
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Tuesday, January 27th, 2009
After the 1st “act” of the story of Intel as a memory chip company founded in 1969, the 2nd act really started in 1985 with the decision to bet the company on the 80386 microprocessor according to Richard S. Tedlow, Harvard Business School professor and residential scholar of the Computer History Museum, in a lecture […]
Shaw to lead 3rd act at Intel
Tags: 90nm, fab, high-k, HKMG, IC, logic, memory, microprocessor, R&D, SoC
Posted in fab, IC | Comments Off on Shaw to lead 3rd act at Intel
Monday, January 26th, 2009
CEA/Leti, along with e-beam lithography supplier Vistec, and new design and software company D2S, recently announced a collaboration focused on refining and validating advanced design-for-e-beam (DFEB) solutions for 45nm and 32nm nodes. Over the next 12 months, Leti will manufacture test chips using a combination of D2S’ design and software capabilities along with the latest […]
CEA/Leti, Vistec, and D2S push EbDW
Tags: 32nm, 45nm, EbDR, IC, lithography, node, SoC
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Friday, January 23rd, 2009
Researchers from Sungkyunkwan University (SKKU) in Korea have found that large graphene films can be formed using CVD over a Ni thin film. The graphene is both strong and stretchy, and at low temperatures the monolayers transferred to SiO2 substrates show electron mobility >3,700 cm2/Vs implying that the quality is as high as mechanically-cleaved graphene. […]
Graphene dreams may be real at SKKU
Tags: CVD, electron, film, graphene, IC, mobility, monolayer
Posted in Equipment, fab, IC, Material | Comments Off on Graphene dreams may be real at SKKU
Thursday, January 22nd, 2009
At SEMICON Korea 2009, SUSS MicroTec unveiled the second generation of its ACS300, a modular system for coating, baking and developing of wafers up to 300mm. Compared to the prior generation, the Gen2 tool reportedly costs less, has reduced footprint, and offers configuration flexibility with new capabilities. The system architecture and process modules are specifically […]
SUSS out with new 300mm track for 3DIC
Tags: 300mm, 3D, IC, lithography, OEM, packaging, tool, track
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Friday, January 16th, 2009
At SEMI’s SMC yesterday, Sung Wook Park, executive vice president and general manager of Hynix Semiconductor, provided a keynote address on the materials needs for mainstream memory chips over the next decade. DRAMs will likely turn into STTRAMs, and NAND Flash will probably be replaced by ReRAM (Ref: Ed’s Threads 080505). Combinatorial materials R&D company […]
Hynix sees STTRAM and ReRAM some day
Tags: DRAM, Flash, materials, memory, MTJ, NAND, PCM, R&D, RAM, ReRAM, SMC, STT, TMR
Posted in Equipment, fab, IC, Material, Product | Comments Off on Hynix sees STTRAM and ReRAM some day