Posts Tagged ‘IEDM’

Friday, January 7th, 2011

IEDM 2010 showed evolutions of NAND Flash with ALD IPD and ECC to 1Xnm node processing, and embedded-DRAM (eDRAM) capacitor stacks in porous low-k, meaning mainstream memory technologies will continue to dominate commercial volumes.

Tuesday, December 21st, 2010

Graphene—the 2D hexagonal lattice of carbon—has been under investigation as a new material for electronics applications due to it’s high mobility and other unique properties. At IEDM this year, an entire session (#23) was devoted to showcasing graphene devices, and to sharing the latest processing tricks to grow and (sometimes) transfer the single-atomic-layer of carbon […]

Monday, October 18th, 2010

IEDM 2010 best hints at 22nm node fab tech alternate-channel materials, dual- and tri-gate transistors, and RF, MEMS, lab-on-chip, graphene, analog, memory ReRAM results.

Thursday, September 23rd, 2010

TSV for 3D integration of heterogeneous ICs used in interposers first, as shown at SEMICON/West, IMAPS, IEDM and companies like ASE, Alchimer, Suss, EVG, Novellus, Vertical Circuits, and IBM.